IGBT 鼻祖巴利迦教授首次來華講演，萬勿錯(cuò)過！

AOS IGBT/IPM/GaN/SiC技術(shù)交流高峰論壇由全球半導(dǎo)體行業(yè)翹楚—美國(guó)萬國(guó)半導(dǎo)體(AOS公司) 在上海盛大舉行，集結(jié)當(dāng)下功率元器件熱門技術(shù)與前沿思想，匯聚全球頂級(jí)知名專家，是關(guān)注功率器件與新能源的工程師不容錯(cuò)過的開創(chuàng)性學(xué)術(shù)高峰論壇。5月23日前報(bào)名可免費(fèi)參會(huì)，機(jī)會(huì)稍縱即逝，不想與此失之交臂？

巴利迦，2012年06月由科學(xué)出版社出版的“功率半導(dǎo)體器件基礎(chǔ)”作者。

編輯推薦

（1）本書作者是功率半導(dǎo)體器件領(lǐng)域的國(guó)際著名專家，IGBT器件發(fā)明人之一。 （2）本書結(jié)合作者多年的實(shí)踐經(jīng)驗(yàn)，不僅深入討論了半導(dǎo)體功率器件的工作原理，而且采用計(jì)算機(jī)來驗(yàn)證物理模型，并討論了實(shí)際復(fù)雜結(jié)構(gòu)器件的優(yōu)化設(shè)計(jì)。 （3）各章都附有習(xí)題，便于讀者深入掌握基本概念，可作為相關(guān)專業(yè)高年級(jí)本科生、研究生的教材。

內(nèi)容簡(jiǎn)介

《功率半導(dǎo)體器件基礎(chǔ)（英文版）》作者是功率半導(dǎo)體器件領(lǐng)域的著名專家，IGBT器件發(fā)明人之一。《功率半導(dǎo)體器件基礎(chǔ)（英文版）》結(jié)合作者多年的實(shí)踐經(jīng)驗(yàn)，深入討論了半導(dǎo)體功率器件的物理模型、工作原理、設(shè)計(jì)原則和應(yīng)用特性，不僅詳細(xì)介紹了硅基器件，還討論了碳化硅器件的特性與設(shè)計(jì)要求。主要內(nèi)容包括材料特性與輸運(yùn)物理、擊穿電壓、肖特基整流器、P-i-N整流器、功率MOSFET器件、雙極型晶體管、晶閘管、IGBT器件等。

《功率半導(dǎo)體器件基礎(chǔ)（英文版）》可作為微電子、電力電子等相關(guān)領(lǐng)域科研人員、工程技術(shù)人員的參考書，也可作為相關(guān)專業(yè)高年級(jí)本科生、研究生的教材。

目　　錄

Preface

Chapter 1 Introduction

1.1 Ideal and Typical Power Switching Waveforms

1.2 Ideal and Typical Power Device Characteristics

1.3 Unipolar Power Devices

1.4 Bipolar Power Devices

1.5 MOS-Bipolar Power Devices

1.6 Ideal Drift Region for Unipolar Power Devices

1.7 Charge-Coupled Structures:Ideal Specific On-Resistance

1.8 Summary

Problems

References

Chapter 2 Material Properties and Transport Physics

2.1 Fundamental Properties

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在線試讀部分章節(jié)

Chapter 1

Introduction

Modern society is increasingly dependent upon electrical appliances for comfort,

transportation, and healthcare, motivating great advances in power generation,

power distribution and power management technologies. These advancements owe

their allegiance to enhancements in the performance of power devices that regulate

the flow of electricity. After the displacement of vacuum tubes by solid state

devices in the 1950s, the industry relied upon silicon bipolar devices, such as

bipolar power transistors and thyristors. Although the ratings of these devices grew

rapidly to serve an ever broader system need, their fundamental limitations in

terms of the cumbersome control and protection circuitry led to bulky and costly

solutions. The advent of MOS technology for digital electronics enabled the

creation of a new class of devices in the 1970s for power switching applications as

well. These silicon power MOSFETs have found extensive use in high frequency

applications with relatively low operating voltages (below 100 V). The merger of

MOS and bipolar physics enabled the creation of yet another class of devices in the

1980s. The most successful innovation in this class of devices has been the

insulated gate bipolar transistor (IGBT). The high power density, simple interface,

and ruggedness of the IGBT have made it the technology of choice for all medium